| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved sub-word driver.SOLUTION: A semiconductor device comprises: a main word line MWB; a sub-word line SWL; a word driver selection line FXT; first and second power supply wiring supplying potentials VKK1, VKK2, respectively; a first conductivity type transistor P1 connected between the word driver selection line FXT and the sub-word line SWL, and including a control electrode connected to the main word line MWB; a second conductivity type transistor N1 connected between the sub-word line SWL and the first power supply wiring; and a first conductivity type transistor P2 connected between the main word line MWB and the control electrode of the transistor N1, and including a control electrode connected to the second power supply wiring. The occupied area of a sub-word driver SWD can be reduced and off-leak current can also be reduced. |
