METHOD FOR CLEANING COMPOUND SEMICONDUCTOR AND SOLUTION FOR CLEANING OF COMPOUND SEMICONDUCTOR

摘要

Provided is a method for cleaning a compound semiconductor, which is capable of reducing environmental load. This method for cleaning a compound semiconductor comprises a step for carrying out a treatment (4) for cleaning a compound semiconductor that comprises gallium as a constituent element at a temperature of 70°C or more with use of a solution (17) which contains pure water and less than 65 wt% of sulfuric acid and has a hydrogen ion concentration of pH 2 or less and a redox potential of 0.6 volt or more.