FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS MEMORIES

摘要

Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.

主权项

1. A method, comprising:
forming a stack, wherein the stack includes a barrier layer; forming a first plurality of trenches and a second plurality of trenches in the barrier layer, wherein trenches of the first plurality of trenches are spaced from each other by trenches of the second plurality of trenches; filling the first plurality of trenches with a dielectric material; filling the second plurality of trenches with metal; and using said metal as a hard mask, removing said stack to form a plurality of stacks separated by the second plurality of trenches.