| 发明名称 |
Microwave-Annealed Indium Gallium Zinc Oxide Films and Methods of Making the Same |
| 摘要 |
A microwave-annealed indium gallium zinc oxide (IGZO) film and methods of making the same are disclosed. The methods may comprise: depositing an IGZO film onto a substrate; and microwave annealing the IGZO film to produce a microwave-annealed IGZO film. |
| 申请公布号 |
US2016027955(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514806050 |
申请日期 |
2015.07.22 |
| 申请人 |
Arizona Board of Regents on Behalf of Arizona State University |
发明人 |
Alford Terry L.;Dhar Aritra |
| 分类号 |
H01L31/18;H01L51/52;H01L31/0224;H01L33/42;H01L33/00;H01L51/56 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
(a) depositing an indium gallium zinc oxide (IGZO) film onto a substrate; and (b) microwave annealing the IGZO film to produce a microwave-annealed IGZO film. |
| 地址 |
Scottsdale AZ US |
