发明名称 |
PIXEL ARRAY STRUCTURE AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, so as to forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised. |
申请公布号 |
US2016027930(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201414426298 |
申请日期 |
2014.07.18 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
LI Tiansheng |
分类号 |
H01L29/786;G02F1/1368;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a pixel array structure, comprising:
forming a doped active layer on an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer between the source electrode and the drain electrode, so as to form an optimized channel located between the retained portion of the doped active layer having a larger thickness and the other of the source electrode and the drain electrode. |
地址 |
Beijing CN |