| 发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
| 摘要 |
A plasma processing apparatus includes a sample stage in a processing chamber in a vacuum container having a placement surface on which a wafer to be processed by using the plasma is placed, a discharge pump connected to a discharge port disposed below the sample stage, and an adjuster that adjusts the amount of discharged gas, in which a first process step of supplying a first processing gas from above the placement surface into the processing chamber and supplying a second processing gas from below the placement surface into the processing chamber to process the wafer by using the first processing gas and a second process step where the first processing gas and the second processing gas are reversed are repeatedly switched over therebetween, and the adjuster adjusts a pressure in the processing chamber to a predetermined value during the processing. |
| 申请公布号 |
US2016027618(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514626988 |
申请日期 |
2015.02.20 |
| 申请人 |
Hitachi High-Technologies Corporation |
发明人 |
Kawakami Masatoshi;Kitada Hiroho;Kihara Hideki;Kusumoto Hironori;Sumiya Masahiro;Tanaka Motohiro;Kozuma Yutaka |
| 分类号 |
H01J37/32;H01L21/3213;H01L21/311;H01L21/67;H01L21/3065 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus comprising:
a vacuum container; a processing chamber that is disposed in the vacuum container and that has an inner space in which a plasma is formed; a sample stage that is disposed in the processing chamber and that has a placement surface on which a wafer to be processed by using the plasma is placed; a discharge port disposed below the sample stage in the processing chamber; a discharge pump disposed such that the discharge pump is connected to the discharge port; and an adjuster that adjusts an amount of gas discharged through the discharge port, wherein a first process step of supplying a first processing gas from above the placement surface into the processing chamber and supplying a second processing gas from below the placement surface into the processing chamber to process the wafer by using the first processing gas and a second process step of supplying the second processing gas from above the placement surface into the processing chamber and supplying the first processing gas from below the placement surface into the processing chamber to process the wafer by using the second processing gas are repeatedly switched over therebetween to process the wafer, and the adjuster adjusts a pressure in the processing chamber to have a predetermined value during the processing of the wafer. |
| 地址 |
Tokyo JP |
