发明名称 DISPLAY DEVICE
摘要 [PROBLEM] To provide a display device capable of improving the transmittance of light at an opening that passes light while maintaining high reflectivity in a reflective layer. [RESOLUTION MEANS] Use a metal film and an reflection increasing film to configure a reflective layer provided in an element substrate to effectively utilize light of a light source. Leave a silicon nitride film that is one portion of the reflection increasing film in the opening that passes the light of the light source while removing the metal film. At this time, the film thickness of the silicon nitride film in the reflection increasing film is ¼ the wavelength of incident light and, on the other hand, the film thickness of the silicon nitride film in the opening is ½ the wavelength of the incident light. The silicon nitride film that is one portion of the reflection increasing film and a passivation film provided in a top layer of an interlayer dielectric film are laminated in the opening to achieve this structure.
申请公布号 US2016025962(A1) 申请公布日期 2016.01.28
申请号 US201414774024 申请日期 2014.03.14
申请人 PIXTRONIX, INC. 发明人 Kuranaga Takehide;Itoga Toshihiko;Fujiyoshi Jun;Adachi Masaya
分类号 G02B26/02 主分类号 G02B26/02
代理机构 代理人
主权项 1. A display device, comprising: a light transmissive substrate, a metal film provided on the light transmissive substrate, a reflective layer having an reflection increasing film that laminates a first insulating film provided between the light transmissive substrate and the metal film and a second insulating film, a light source provided on the reflective layer side, an opening that passes through the second insulating film, the metal film and the insulating interlayer layer in a region that passes light emitted from the reflective layer side, a third insulating film provided in the bottom of the opening having a film thickness that is n/2 (n=an integer of 1 or more) of a wavelength of light irradiated from the light source, a switching element provided on the reflective layer, an insulating interlayer that buries the switching element, and a passivation film provided on the insulating interlayer.
地址 San Diego CA US