DATA RECORDING METHOD AND NONVOLATILE STORAGE

摘要

PROBLEM TO BE SOLVED: To provide a method of recording data on a memory cell array by utilizing a difference whether each of memory cells in an initial state or in a variable condition.SOLUTION: The method includes the steps of: applying a forming stress to a memory cell which is selected from plural memory cells in an initial state (step S1); and setting a resistance value of the memory cell applied with the forming stress within a range of a first resistance value (step S2). Data is read out based on a first threshold value which is set between a range available for the resistance value of the memory cell in the initial state and a range available for the resistance value of the memory cell in the variable condition. In step S2, when the resistance value of the memory cell applied with the forming stress is larger than the first determination value, the memory cell is applied with a first correction signal; when the resistance value of the memory cell smaller than the second determination value, the memory cell is applied with a second correction signal.