MASK SET, PIXEL UNIT AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A mask set, a pixel unit and a manufacturing method thereof, an array substrate and a display device are provided to overcome the problem of low brightness of a display screen of a display device. In the pixel unit, the maximum size value of an overlapped area between an active layer and a drain electrode of a thin-film transistor (TFT) in the direction parallel to data line is less than the size value of one side, overlapped with the data line, in an overlapped area between the active layer and a source electrode; and the source electrode is the portion of the data line disposed in an overlapped area between the active layer and the data line. The pixel unit has the advantages of a larger opening area and higher light transmittance. Thus, the brightness of a display screen of the display device comprising the pixel units can be enhanced. Moreover, the problem of screen flicker can be avoided to some extent, and hence the display quality of images can be improved.

主权项

1. A mask set configured to manufacture a pixel unit including a thin-film transistor (TFT) and a data line, comprising:
a first mask including an active layer pattern portion configured to form an active layer of the TFT; a second mask including a gate electrode pattern portion configured to form a gate electrode of the TFT; and a third mask including a source electrode pattern portion, a drain electrode pattern portion and a data line pattern portion respectively configured to form a source electrode and a drain electrode of the TFT and the data line, wherein when the first mask, the second mask and the third mask are aligned and overlapped with each other, a maximum size value of an overlapped area between the active layer pattern portion of the first mask and the drain electrode pattern portion of the third mask in the direction parallel to the data line pattern portion is less than a size value of one side, overlapped with the data line pattern portion, in an overlapped area between the active layer pattern portion of the first mask and the source electrode pattern portion of the second mask.