SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a substrate, a stack structure, peripheral gate structures and residual spacers. The substrate includes a cell array region and a peripheral circuit region. The stack structure is disposed on the cell array region, having electrodes and insulating layers alternately stacked. The peripheral gate structures are disposed on the peripheral circuit region, being spaced apart from each other in one direction and having a peripheral gate pattern disposed on the substrate, and a peripheral gate spacer disposed on a sidewall of the peripheral gate pattern. The residual spacers are disposed on sidewalls of the peripheral gate structures, having a sacrificial pattern and an insulating pattern that are stacked. The insulating pattern includes substantially the same material as the insulating layers of the stack structure.

主权项

1. A semiconductor device comprising:
a substrate including a cell array region and a peripheral circuit region; a stack structure disposed on the cell array region, the stack structure including a plurality of electrodes and a plurality of insulating layers alternately stacked; a plurality of peripheral gate structures disposed on the peripheral circuit region, the plurality of peripheral gate structures spaced apart from each other in one direction; and a plurality of residual spacers disposed on sidewalls of the plurality of peripheral gate structures, wherein each of the plurality of peripheral gate structures comprises:
a peripheral gate pattern disposed on the substrate; anda peripheral gate spacer disposed on a sidewall of the peripheral gate pattern, wherein each of the plurality of residual spacers comprises:
a sacrificial pattern andan insulating pattern that are stacked, and wherein the insulating pattern includes substantially the same material as the plurality of insulating layers of the stack structure.