Three-Dimensional Offset-Printed Memory

摘要

The present invention discloses a three-dimensional offset-printed memory (3D-oP). Compared with a conventional three-dimensional mask-programmed read-only memory (3D-MPROM), it has a lower data-mask count and thereby a lower data-mask cost. The mask-patterns for different memory levels/bits-in-a-cell are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to said data-mask. Accordingly, data-patterns are printed into different memory levels/bits-in-a-cell from a same data-mask.

主权项

1. A method of making a three-dimensional offset-printed memory (3D-oP), comprising the steps of:
1) forming a substrate circuit on a semiconductor substrate; 2) forming a first memory level above said substrate, said first memory level comprising a first data-coding layer, wherein the data-pattern in said first data-coding layer is formed from a first portion of a data-mask; 3) forming a second memory level above said first memory level, said second memory level comprising a second data-coding layer, wherein the data-pattern in said second data-coding layer is formed from a second portion of said data-mask; wherein said first and second portions are on a same data-mask.