发明名称 METHOD FOR FABRICATING A POWER SEMICONDUCTOR PACKAGE INCLUDING VERTICALLY STACKED DRIVER IC
摘要 In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the semiconductor package to a mounting surface. The semiconductor package also includes a control FET of a power converter switching stage attached to the die side of the control conductive carrier, and a driver integrated circuit (IC) for driving the control FET. The driver IC is situated above the control FET and is electrically coupled to the control FET by at least one conductive buildup layer formed over the control conductive carrier.
申请公布号 US2016027767(A1) 申请公布日期 2016.01.28
申请号 US201514876631 申请日期 2015.10.06
申请人 Infineon Technologies Americas Corp. 发明人 Cho Eung San;Sawle Andrew N.;Pavier Mark;Cutler Daniel
分类号 H01L25/00;H01L23/00;H01L25/16 主分类号 H01L25/00
代理机构 代理人
主权项
地址 El Segundo CA US