METHOD FOR PRODUCING A REAR-SIDE CONTACT SYSTEM FOR A SILICON THIN-LAYER SOLAR CELL

摘要

In the method according to the invention, which makes it possible to produce a rear-side "AII-by-laser point-contact scheme" (ALPS) contact system, a TCO layer is applied before the application of the organic insulating layer to the emitter layer, after that holes for the contacts with respect to the silicon absorber layer are made in the insulating layer, in that firstly markings are produced at future locations of the contacts with respect to the silicon absorber layer in the organic insulating layer with a pulsed UV laser without material being removed all the way through, and these markings are subsequently etched in at least one wet-chemical, selective etching step, initially as far as the TCO layer and then in at least one further etching step through the emitter layer to the silicon absorber layer, subsequently holes for the contacts with respect to the emitter layer are made in an analogous way in the insulating layer, wherein the sensitive emitter is not damaged. Subsequently, because of the exclusive use of lasers for the positioning-relevant processes, the holes made for the contacts with respect to the Si absorber layer are selectively doped by means of a laser.