POINT DEFECT CONCENTRATION CALCULATION METHOD, GROWN-IN DEFECT CALCULATION METHOD, GROW-IN DEFECT IN-PLANE DISTRIBUTION CALCULATION METHOD, AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD USING SAID METHODS

摘要

PROBLEM TO BE SOLVED: To provide a point defect concentration calculation method capable of calculating a point defect concentration precisely for a short time; and a Grown-in defect calculation method capable of calculating the size of a Grown-in defect precisely for s short time; a Grown-in defect in-plane distribution calculation method capable of determining an accurate defect distribution simply; and a silicon single crystal production method utilizing the calculation results of those methods.SOLUTION: A point defect calculation method for calculating a point defect concentration in a silicon single crystal being raised is characterized in that the diffusion of a point defect is calculated by setting the diffusion parallel to a crystal growth axis and the diffusion in the crystal diameter direction individually as a diffusion of one dimension.