发明名称 |
THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME |
摘要 |
A thin film transistor includes: a semiconductor layer on a base substrate, and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region. |
申请公布号 |
US2016027854(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201514709411 |
申请日期 |
2015.05.11 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Ku Suk Hoon |
分类号 |
H01L27/32;H01L29/786 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
|
主权项 |
1. A thin film transistor comprising:
a semiconductor layer on a base substrate and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region. |
地址 |
Yongin-City KR |