发明名称 THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
摘要 A thin film transistor includes: a semiconductor layer on a base substrate, and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region.
申请公布号 US2016027854(A1) 申请公布日期 2016.01.28
申请号 US201514709411 申请日期 2015.05.11
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Ku Suk Hoon
分类号 H01L27/32;H01L29/786 主分类号 H01L27/32
代理机构 代理人
主权项 1. A thin film transistor comprising: a semiconductor layer on a base substrate and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region.
地址 Yongin-City KR