| 摘要 |
A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node, and a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit. The first output is associated with a test initiation function of an internal test process. A second transistor has a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit. The second output is associated with an over-current indication of the internal test process. |
| 主权项 |
1. A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”), the driver circuit comprising:
a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node; a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit, wherein the first output is associated with a test initiation function of an internal test process; a second transistor having a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit, wherein the second output is associated with an over-current indication of the internal test process; and wherein the test circuit is operable to perform the internal test process to confirm an operation of the comparator, the second transistor, and the test circuit. |
