RESISTIVE MEMORY DEVICE

摘要

A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower cell dielectric layer. An upper cell dielectric layer may be on the substrate and over the lower cell dielectric layer, body unit conductor and memory element conductors. The upper cell dielectric layer isolates the memory element conductors.

主权项

1. A method for forming a device comprising:
providing a substrate prepared with a lower cell dielectric layer with gate conductors disposed in a first direction, the gate conductors separated the lower cell dielectric layer; forming a body unit conductor on the lower cell dielectric layer and gate conductors, wherein the body unit conductor is disposed along a second direction and traverses the gate conductors; forming memory element conductors on the body unit and lower cell dielectric layer, the memory element conductors are disposed along the first direction over the gate conductors; and forming an upper cell dielectric layer on the substrate to cover the lower cell dielectric layer, body unit conductor and memory element conductors, the upper cell dielectric layer isolating the memory element conductors.