| 发明名称 |
PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE |
| 摘要 |
A semiconductor device including a plurality of suspended nanowires and a gate structure that is present on a channel region portion of the plurality of suspended nanowires. The gate structure includes a uniform length extending from an upper surface of the gate structure to the base of the gate structure. A dielectric spacer having a graded composition is present in direct contact with the gate structure. The dielectric spacer having a uniform length extending from an upper surface of the gate structure to the base of the gate structure. Source and drain regions are present on source and drain region portions of the plurality of suspended nanowires. |
| 申请公布号 |
US2016027929(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201414341518 |
申请日期 |
2014.07.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L29/786;H01L29/06;H01L29/66;H01L29/10 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of suspended nanowires; a gate structure present on a channel region portion of the plurality of suspended nanowires, the gate structure having a uniform length extending from an upper surface of the gate structure to the base of the gate structure; a dielectric spacer having a graded composition in direct contact with the gate structure, the dielectric spacer having a uniform length extending from an upper surface of the gate structure to the base of the gate structure; and source and drain regions present on source and drain region portions of the plurality of suspended nanowires. |
| 地址 |
Armonk NY US |
