发明名称 WET-COATING OF THIN FILM LITHIUM NICKEL OXIDES FOR ELECTROCHROMIC APPLICATIONS
摘要 Process for forming a multi-layer electrochromic structure, the process comprising depositing a film of a liquid mixture onto a surface of a substrate, and treating the deposited film to form an anodic electrochromic layer, the liquid mixture comprising a continuous phase and a dispersed phase, the dispersed phase comprising metal oxide particles, metal hydroxide particles, metal alkoxide particles, metal alkoxide oligomers, gels or particles, or a combination thereof having a number average size of at least 5 nm.
申请公布号 US2016026057(A1) 申请公布日期 2016.01.28
申请号 US201514806543 申请日期 2015.07.22
申请人 Kinestral Technologies, Inc. 发明人 CHOI Hye Jin;Bass John David;Lachman Eric;Giaquinta Daniel Mark;Turner Howard W.;Murphy Ellen
分类号 G02F1/15;B05D3/04;B05D1/00 主分类号 G02F1/15
代理机构 代理人
主权项 1. A process for preparing a multi-layer electrochromic structure, the process comprising: depositing a film of a liquid mixture comprising lithium, nickel, and at least one bleached state stabilizing element onto a surface of a substrate, and treating the deposited film to form an anodic electrochromic layer comprising a lithiated nickel oxide, wherein (i) the atomic ratio of lithium to the combined amount of nickel and the bleached state stabilizing element in the anodic electrochromic layer is at least 0.4:1, respectively, (ii) the atomic ratio of the amount of the bleached state stabilizing element to the combined amount of nickel and the bleached state stabilizing elements in the anodic electrochromic layer is at least about 0.025:1, respectively, (iii) the bleached state stabilizing element is selected from the group consisting of Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, B, Al, Ga, In, Si, Ge, Sn, P, Sb and combinations thereof, and (iv) the liquid mixture comprises a dispersed phase and a continuous phase, the dispersed phase comprising a dispersed species having a number average size of at least 5 nm.
地址 South San Francisco CA US
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