DATA STORAGE METHOD AND CONTROL DEVICE FOR PHASE-CHANGE MEMORY

摘要

A data storage method and a control device for a phase-change memory. The data storage method for the phase-change memory comprises: acquiring to-be-stored data, where to-be-stored data is multibit data (S101); generating an erase pulse signal and a write pulse signal on the basis of the to-be-stored data, where the write pulse signal is a signal comprising at least two consecutive pulses, the at least two consecutive pulses are of a same amplitude, and the amplitude of the at least two consecutive pulses is a value determined on the basis of the to-be-stored data (S102); applying the erase pulse signal to a storage unit of the phase-change memory to allow the storage unit to switch to a crystalline state (S103); and, applying the write pulse signal to the storage unit to allow the storage unit to switch to an amorphous state of a first electrical resistance value, thus expressing the to-be-stored data via the amorphous state of the first electrical resistance of the storage unit (S104). This solves the problem of thermal crosstalk during multi-value storage.