发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can adjust a resistance value.SOLUTION: A semiconductor device manufacturing method comprises: forming a semiconductor layer on a substrate; forming an insulation film on the semiconductor layer; forming a first opening and a second opening in the insulation film; forming a conductive film on the insulation film; etching the conductive film to form wiring which contacts the semiconductor layer via the first opening; and adding a hydrogen or a noble gas to a part of the semiconductor layer exposed in the second opening. Or, the semiconductor device manufacturing method comprises: performing a plasma treatment on the part of the semiconductor layer exposed in the second opening.
申请公布号 JP2016015512(A) 申请公布日期 2016.01.28
申请号 JP20150175548 申请日期 2015.09.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OSHIMA KAZUAKI
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
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