| 发明名称 |
VERTICAL STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR DEVICE |
| 摘要 |
According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment. |
| 申请公布号 |
US2016027917(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514876855 |
申请日期 |
2015.10.07 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
LIN CHENG-TUNG;TSAI TENG-CHUN;WANG LI-TING;CHEN DE-FANG;CHEN BING-HUNG;HUANG HUANG-YI;CHANG HUI-CHENG;LIN HUAN-JUST;TSAI MING-HSING |
| 分类号 |
H01L29/78;H01L21/02;H01L21/762;H01L29/66;H01L29/06;H01L21/3105;H01L21/311 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, comprising:
providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; and oxidizing the oxide layer by using an oxygen plasma treatment. |
| 地址 |
Hsinchu TW |
