FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED FOR A BACKGATE BIAS AND METHOD OF FABRICATION

摘要

A semiconductor device, includes a substrate, a source structure and a drain structure formed on the substrate. At least one interconnect structure interconnects the source structure and the drain structure and serves as a channel therebetween. A gate structure is formed over the at least one interconnect structure to provide a control of a conductivity of carriers in the channel. Each of the interconnect structures include a center core serving as a backbias electrode for the channel.

主权项

1. A semiconductor device, comprising:
a substrate; a source structure and a drain structure formed on said substrate; at least one interconnect structure interconnecting said source structure and said drain structure and serving as a channel therebetween; and a gate structure formed over said at least one interconnect structure to provide a control of a conductivity of carriers in said channel, wherein each of said at least one interconnect structure includes a center core serving as a backbias electrode for said channel.