THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

主权项

1. A method of manufacturing a thin film transistor substrate, comprising:
sequentially forming a semiconductor layer, a first insulation layer and a second insulation layer, on a base substrate; forming a first photoresist pattern on the second insulation layer and having a first thickness portion, and a second thickness portion thinner than the first thickness portion; removing exposed portions of the second insulation layer, the first insulation layer and the semiconductor layer using the first photoresist pattern as a mask, to form an intermediate insulation pattern, a first insulation pattern and a semiconductor pattern from the second insulation layer, the first insulation layer and the semiconductor layer, respectively; reducing an entirety of the first photoresist pattern by a thickness of the second thickness portion, to form a second photoresist pattern having a third thickness and expose a portion of the intermediate insulation pattern; removing the exposed portion of the intermediate insulation pattern using the second photoresist pattern as a mask, to form a second insulation pattern from the intermediate insulation pattern; and forming a gate electrode on and overlapping both the first insulation pattern and the second insulation pattern.