INTERCONNECTION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

An interconnection structure may include insulating layers stacked stepwise and dielectric layers interposed between the insulating layers. The interconnection structure may include conductive layers interposed between the insulating layers and surrounding sidewalls of the dielectric layers, respectively. The interconnection structure may include contact plugs each coupled to one of the conductive layers. The contact plugs may at least partially pass through the dielectric layers.

主权项

1. An interconnection structure, comprising:
insulating layers stacked stepwise; dielectric layers interposed between the insulating layers; conductive layers interposed between the insulating layers and surrounding sidewalls of the dielectric layers, respectively, wherein each of the conductive layers and each of the dielectric layers corresponding thereto are located at substantially the same level; and contact plugs each coupled to one of the conductive layers, wherein the contact plugs at least partially pass through the dielectric layers.