发明名称 System and Method for Thin Film Photovoltaic Modules and Back Contact for Thin Solar Cells
摘要 The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes.
申请公布号 US2016027954(A1) 申请公布日期 2016.01.28
申请号 US201414774421 申请日期 2014.03.12
申请人 NEW JERSEY INSTITUTE OF TECHNOLOGY 发明人 Cheng Zimeng;Chin Ken K.;Delahoy Alan E.
分类号 H01L31/18;H01L31/0296;H01L31/0224 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for fabricating a photovoltaic device comprising: providing a transparent substrate; positioning a transparent conductor layer positioned on the transparent substrate; a window layer positioned on the transparent conductor layer; an absorber layer positioned on the window layer, the absorber layer including a Group II-VI semiconductor; a doping layer positioned on the absorber layer, the doping layer including at least one of silver oxide or copper oxide; a contact layer positioned on the doping layer, the contact layer: (i) including one or more metal oxides, and (ii) forming an ohmic contact with the absorber layer; and a metal layer positioned on the contact layer.
地址 Newark NJ US