| 发明名称 |
POROUS FILM WITH HIGH HARDNESS AND A LOW DIELECTRIC CONSTANT AND PREPARATION METHOD THEREOF |
| 摘要 |
The present invention relates to a plasma polymerized thin film having high hardness and a low dielectric constant and a manufacturing method thereof, and in particular, relates to a plasma polymerized thin film having high hardness and a low dielectric constant for use in semiconductor devices, which has improved mechanical strength properties such as hardness and elastic modulus while having a low dielectric constant, and a manufacturing method thereof. |
| 申请公布号 |
US2016024267(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514825823 |
申请日期 |
2015.08.13 |
| 申请人 |
Research & Business Foundation Sungkyunkwan University |
发明人 |
JUNG Dong Geun;KIM Hoon Bae;OH Hyo Jin;LEE Chae Min |
| 分类号 |
C08J9/00;H01L21/02 |
主分类号 |
C08J9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A porous film with high hardness and a low dielectric constant formed by plasma polymerization using a compound represented by the following Chemical Formula 1 as a precursor: in the formula, R1 to R12 are each independently H or C1-C5 alkyl, wherein a relative dielectric constant of the porous film is controlled within the range from 1.5 to 3.5 by introducing pores and the hardness of the porous film is controlled within the range from 0.1 GPa to 10 GPa. |
| 地址 |
Suwon-si KR |
