METHOD FOR MANUFACTURING TFT BACKPLATE AND TFT BACKPLATE STRUCTURE

摘要

A method for manufacturing a TFT backplate and a TFT backplate structure. The method comprises: step 1, forming a gate electrode (2) and a first metal electrode M1 on a substrate (1); step 2, continuously forming films on the gate electrode (2), the first metal electrode M1 and the substrate (1) so as to successively form a gate electrode insulating layer (3), a semiconductor layer and an etching barrier layer, and forming an island semiconductor layer (4) and an island etching barrier layer (5) via a photoetching process; step 3, patterning the island etching barrier layer (5) and the gate electrode insulating layer (3) via a photoetching process to form an etching barrier layer via holes (51) and a gate electrode insulating layer via holes (31); step 4, forming a source/drain electrode (6) and a second metal electrode M2; step 5, forming a passivation protective layer (7); step 6, forming a flat layer (8); step 7, forming a pixel electrode layer (9); step 8, forming a pixel definition layer (10); and step 9, forming a separation pillar (11).