A system for asymmetrically selecting a memory element is described. The system includes a number of memory cells in a crossbar array. Each memory cell includes a memory element to store information. The memory element is defined as an intersection between a column electrode and a row electrode of the crossbar array. Each memory cell also includes a selector to select a target memory element by relaying a first selecting voltage to a column electrode that corresponds to the target memory element and relaying a second selecting voltage to a row electrode that corresponds to the target memory element. The system also includes a controller to pass a first standing voltage to column electrodes of the crossbar array and to pass a second standing voltage to row electrodes of the crossbar array. The first standing voltage is different than the second standing voltage.
