OXIDE DIELECTRIC AND METHOD FOR MANUFACTURING SAME, AND SOLID STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

[Problem] To provide an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, semiconductor device, or micro-electrical-mechanical system) equipped with the oxide dielectric. [Solution] An oxide layer (30) including one of the oxide dielectrics of the present invention is a layer of oxide (which may have unavoidable impurities) that includes bismuth (Bi) and niobium (Nb), and has a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO4-type crystal structure. In addition, the content of the first crystal phase and the content of the second crystal phase are adjusted in the oxide layer (30), the dielectric constant of the first crystal phase decreasing with the rise in the temperature of the oxide layer (30) in a temperature range of 25°C to 120°C and the dielectric constant of the second crystal phase increasing with the rise in the temperature of the oxide layer (30) in said temperature range.