STI METHODS FOR FORMING SEMICONDUCTOR MATERIALS IN STI TRENCHES,申请号KR20130154720-传众专利搜索

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发明名称	STI METHODS FOR FORMING SEMICONDUCTOR MATERIALS IN STI TRENCHES
摘要	방법이 수소(H) 및 염화수소(HCl)를 프로세스 가스들로서 포함하는 환경에서 실리콘 영역을 어닐링하는 단계를 포함한다. 어닐링 단계 이후에, 상기 실리콘 영역의 표면으로부터 반도체 영역이 성장된다.
申请公布号	KR101589797(B1)	申请公布日期	2016.01.28
申请号	KR20130154720	申请日期	2013.12.12
申请人	타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드	发明人	홀랜드 마틴 크리스토퍼;벨리아니티스 조지오스
分类号	H01L21/20;H01L21/336	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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