发明名称 |
SELF-DRIVEN SYNCHRONOUS RECTIFICATION FOR A POWER CONVERTER |
摘要 |
A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. The read-out circuit may be coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor. The read-out circuit may be arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor. |
申请公布号 |
US2016028319(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201414338191 |
申请日期 |
2014.07.22 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Bernacchia Giuseppe;Guillemant Olivier |
分类号 |
H02M3/335 |
主分类号 |
H02M3/335 |
代理机构 |
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代理人 |
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主权项 |
1. A device, comprising:
a power converter having an isolated topology, including:
a power transistor including a gate terminal, a first drain/source terminal, and a second drain/source terminal;a sense transistor including a gate terminal, a first drain/source terminal, and a second drain/source terminal, wherein the sense transistor is arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor; anda read-out circuit that is coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor, wherein the read-out circuit is arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor. |
地址 |
Villach AT |