发明名称 SELF-DRIVEN SYNCHRONOUS RECTIFICATION FOR A POWER CONVERTER
摘要 A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. The read-out circuit may be coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor. The read-out circuit may be arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor.
申请公布号 US2016028319(A1) 申请公布日期 2016.01.28
申请号 US201414338191 申请日期 2014.07.22
申请人 Infineon Technologies Austria AG 发明人 Bernacchia Giuseppe;Guillemant Olivier
分类号 H02M3/335 主分类号 H02M3/335
代理机构 代理人
主权项 1. A device, comprising: a power converter having an isolated topology, including: a power transistor including a gate terminal, a first drain/source terminal, and a second drain/source terminal;a sense transistor including a gate terminal, a first drain/source terminal, and a second drain/source terminal, wherein the sense transistor is arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor; anda read-out circuit that is coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor, wherein the read-out circuit is arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor.
地址 Villach AT