THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.

主权项

1. A thermoelectric element comprising:
a semiconductor substrate; a plurality of first semiconductor fin structures and a plurality of second semiconductor fin structures disposed on the semiconductor substrate, each of the first and second semiconductor fin structures extending in a first direction and protruding from the semiconductor substrate; a plurality of first semiconductor nanowires disposed on the first semiconductor fin structures, the first semiconductor nanowires including first impurities; a plurality of second semiconductor nanowires disposed on the second semiconductor fin structures, the second semiconductor nanowires including second impurities different from the first impurities; a first electrode connected to first ends of the first semiconductor nanowires and first ends of the second semiconductor nanowires; a second electrode connected to second ends of the first semiconductor nanowires; and a third electrode connected to second ends of the second semiconductor nanowires.