SOLID-STATE IMAGING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND IMAGING SYSTEM

摘要

A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

主权项

1. A solid-state imaging apparatus comprising:
a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method; a second semiconductor region of the first conductivity type provided on the first semiconductor region; and a third semiconductor region of a second conductivity type provided in the second semiconductor region such that a pn junction is formed between the second semiconductor region and the third semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration of the first semiconductor region decreases as a position within the first semiconductor region goes from a side of the substrate toward a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.