发明名称 BACKPLANE FOR DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE BACKPLANE
摘要 A backplane for a display apparatus includes a substrate including a display area and a non-display area; a first transistor formed on the display area; and a second transistor formed on the non-display area, wherein a first active layer includes a first channel area, a first source area disposed on one side of the first channel area, a first drain area disposed on the other side of the first channel area, and a low-density doped area and a halo doped area that are adjacent to both ends of the first gate electrode, and the second active layer includes a second channel area, a second source area disposed on one side of the second channel area, and a second drain area disposed on the other side of the second channel area.
申请公布号 US2016027814(A1) 申请公布日期 2016.01.28
申请号 US201414568494 申请日期 2014.12.12
申请人 Samsung Display Co., Ltd. 发明人 Jin Minhyun;Cho Hyunduck
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A backplane for a display apparatus, the backplane comprising: a substrate including a display area and a non-display area; a first transistor comprising a first active layer, a first gate electrode, a first source electrode, and a first drain electrode that are formed on the display area, wherein the first gate electrode, the first source electrode, and the first drain electrode are formed on the first active layer; a second transistor comprising a second active layer, a second gate electrode, a second source electrode, and a second drain electrode that are formed on the non-display area, wherein the second gate electrode, the second source electrode, and the second drain electrode are formed on the second active layer; a first insulating layer formed between the first active layer and the first gate electrode; and a second insulating layer formed between the second active layer and the second gate electrode, wherein the first active layer comprises a first channel area, a first source area disposed on a first side of the first channel area, a first drain area disposed on a second side of the first channel area, and a low-density doped area and a halo doped area adjacent to first and second ends of the first gate electrode, and wherein the second active layer only comprises a second channel area, a second source area disposed on a first side of the second channel area, and a second drain area disposed on a second side of the second channel area.
地址 Yongin-city KR