| 发明名称 |
MASK PATTERN CORRECTING METHOD |
| 摘要 |
A mask pattern correcting method according to an embodiment is a correcting method of a mask pattern to be used in a semiconductor device manufacturing process. In the correcting method, a plurality of kernels calculated based on an optical system of an exposure tool is prepared. Weight coefficients for weighting the kernels, respectively, to be used when the kernels are synthesized, are calculated. The kernels are synthesized using the calculated weight coefficients. The mask pattern is corrected using the synthesized kernels. |
| 申请公布号 |
US2016026079(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514608429 |
申请日期 |
2015.01.29 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KIMURA Taiki;Kotani Toshiya;Takahashi Masanori |
| 分类号 |
G03F1/36;G06F17/50 |
主分类号 |
G03F1/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A correcting method of a mask pattern to be used in a semiconductor device manufacturing process, the method comprising:
preparing a plurality of kernels calculated based on an optical system of an exposure tool; calculating weight coefficients for weighting the kernels, respectively, to be used when the kernels are synthesized; synthesizing the kernels using the calculated weight coefficients; and correcting the mask pattern using the synthesized kernels. |
| 地址 |
Minato-ku JP |
