发明名称 |
PLASMA CVD DEVICE AND PLASMA CVD METHOD |
摘要 |
The present invention relates to a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided. |
申请公布号 |
US2016024657(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201414775121 |
申请日期 |
2014.03.07 |
申请人 |
TORAY INDUSTRIES, INC. |
发明人 |
Sakamoto Keitaro;Tonai Shunpei;Ejiri Hiroe;Nomura Fumiyasu |
分类号 |
C23C16/509;H01J37/32;C23C16/455;C23C16/50;B05D1/00 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma CVD device comprising a plasma CVD electrode unit and a substrate-holding mechanism in a vacuum chamber, wherein the plasma CVD electrode unit comprises:
an anode; a cathode facing the anode at a distance; and a first gas supply nozzle supplying a gas through a plasma-generation space between the anode and the cathode, the substrate-holding mechanism being provided at a position to contact the gas passing through the plasma-generation space, wherein a gas-supply directional length of the anode and a gas-supply directional length of the cathode are longer than a distance between the anode and cathode. |
地址 |
Tokyo JP |