发明名称 MULTI-STEP ION IMPLANTATION
摘要 Systems and methods for strengthening a sapphire part are described herein. One embodiment may take the form of a method including orienting a first surface of a sapphire member relative to an ion implantation device and performing a first implantation step. The implanting step may include directing ions at the first surface of the sapphire member to embed them under the first surface. The systems and methods may also include one or more of heating the sapphire member to diffuse the implanted ions into deeper layers of sapphire member, cooling the sapphire member, and performing at least a second implantation step directing ions at the first surface of the sapphire member to embed the ions under the first surface.
申请公布号 US2016024646(A1) 申请公布日期 2016.01.28
申请号 US201314239742 申请日期 2013.02.12
申请人 APPLE INC. 发明人 Memering Dale N.;Myers Scott A;Weber Douglas J.
分类号 C23C14/48;C23C14/58;H01J37/32 主分类号 C23C14/48
代理机构 代理人
主权项 1. A method comprising: orienting a surface of a sapphire member relative to an ion implantation device; performing a first implantation step comprising directing ions at the surface of the sapphire member, the ions embedding under the surface; heating the sapphire member to diffuse the implanted ions into deeper layers of the sapphire member; cooling the sapphire member; and performing at least a second implantation step comprising directing ions at the surface of the sapphire member, the ions embedding under the surface.
地址 Cupertino CA US