VACUUM ARC DEPOSITION DEVICE AND VACUUM ARC DEPOSITION METHOD

摘要

Provided are: a vacuum arc deposition device that makes it possible to suitably control a film formation area on the surface of a substrate and form a thin film having good quality; and a vacuum arc deposition method. The vacuum arc deposition device performs arc discharge on a cathode formed from a carbon material, causes the carbon material to evaporate so that plasma is generated in a beam state, and forms a film by causing the carbon material to be deposited on a substrate surface. The vacuum arc deposition device is provided with: a cathode provided with at least one protrusion that protrudes toward a substrate; a magnetic field generation means that is arranged in the vicinity of the cathode and that generates a magnetic field around the cathode; and a dynamic magnetic field formation means that causes the magnetic field generation means to move and forms a dynamic magnetic field around the cathode. The vacuum arc deposition device is configured so as to form a film by using the dynamic magnetic field that is formed around the cathode to make the plasma in a beam state scan the substrate surface.