ULTRAVIOLET SEMICONDUCTOR SENSOR DEVICE AND METHOD OF MEASURING ULTRAVIOLET RADIATION

摘要

A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.

主权项

1. A semiconductor sensor device, comprising:
a semiconductor substrate having a main surface; a photodiode arranged in the substrate at or near the main surface, the photodiode generating an electric signal in response to incident radiation; a further photodiode arranged in the substrate at or near the main surface, the further photodiode generating a further electric signal in response to the incident radiation; the photodiode and the further photodiode being formed and arranged in such a manner that in case of incident ultraviolet radiation the electric signal from the photodiode is larger than the further electric signal from the further photodiode; and the electric signal from the photodiode being attenuated by the further electric signal and thus yielding an electric signal primarily measuring the incident ultraviolet radiation.