| 摘要 |
PROBLEM TO BE SOLVED: To increase the density of plasma generated in one plasma generation space which has relatively high light emission intensity between two plasma generation spaces formed in a processing container and having different light emission intensities.SOLUTION: A film deposition apparatus is provided which includes a processing container, a placing plate, a first gas supply part, a second gas supply part, a high-frequency power source, and a magnet. In the film deposition apparatus, the first gas supply part supplies a first reaction gas to a strong plasma generation space formed in the processing container, and the second gas supply part supplies a second reaction gas which reacts on an active seed of the first reaction gas to deposit a reaction film on a substrate to a weak plasma generation space formed in the processing container and generating plasma having weaker light emission intensity than the plasma generated in the strong plasma generation space. High-frequency electric power is supplied to the plasma generation spaces to generate an electric field for transforming the first reaction gas and second reaction gas into plasma in the strong plasma generation space and weak plasma generation space, and the magnet is so arranged as to generate a magnetic field in a direction crossing the direction of the electric field generated in the strong plasma generation space. |
