发明名称 |
GALLIUM OXIDE SUBSTRATE, AND ITS PRODUCTION |
摘要 |
PROBLEM TO BE SOLVED: To provide a gallium oxide substrate manufacturing method capable of acquiring a gallium oxide substrate from an ingot of a gallium oxide single crystal while suppressing the occurrence of a defect, and a gallium oxide substrate having a structure capable of suppressing the occurrence of a defect when processing.SOLUTION: In one mode of embodiment, a gallium oxide substrate manufacturing method comprises: the step of cutting out a columnar block 20 of a gallium oxide single crystal having a section parallel to a radial direction different from a (100) plane, from an ingot 2 of the gallium oxide single crystal by a wire discharge working; and the step of slicing the columnar block 20 to acquire a gallium oxide substrate 30. |
申请公布号 |
JP2016013929(A) |
申请公布日期 |
2016.01.28 |
申请号 |
JP20140135452 |
申请日期 |
2014.06.30 |
申请人 |
TAMURA SEISAKUSHO CO LTD;KOHA CO LTD |
发明人 |
YAMAOKA MASARU;MASUI TAKEKAZU;MORISHIMA YOSHIKATSU;ABE MICHITAKA |
分类号 |
C30B29/16;B23H9/00;B24B27/06;C30B33/00 |
主分类号 |
C30B29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|