发明名称 GALLIUM OXIDE SUBSTRATE, AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a gallium oxide substrate manufacturing method capable of acquiring a gallium oxide substrate from an ingot of a gallium oxide single crystal while suppressing the occurrence of a defect, and a gallium oxide substrate having a structure capable of suppressing the occurrence of a defect when processing.SOLUTION: In one mode of embodiment, a gallium oxide substrate manufacturing method comprises: the step of cutting out a columnar block 20 of a gallium oxide single crystal having a section parallel to a radial direction different from a (100) plane, from an ingot 2 of the gallium oxide single crystal by a wire discharge working; and the step of slicing the columnar block 20 to acquire a gallium oxide substrate 30.
申请公布号 JP2016013929(A) 申请公布日期 2016.01.28
申请号 JP20140135452 申请日期 2014.06.30
申请人 TAMURA SEISAKUSHO CO LTD;KOHA CO LTD 发明人 YAMAOKA MASARU;MASUI TAKEKAZU;MORISHIMA YOSHIKATSU;ABE MICHITAKA
分类号 C30B29/16;B23H9/00;B24B27/06;C30B33/00 主分类号 C30B29/16
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