MRAM Device and Fabrication Method Thereof

摘要

A method of forming and a magnetoresistive random access memory (MRAM) device. In an embodiment, the MRAM device includes a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall, a top electrode disposed over the magnetic tunnel junction, and a dielectric spacer supported by the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a second sidewall substantially co-planar with the first sidewall of the magnetic tunnel junction.

主权项

1. A method for forming a magnetoresistive random access memory (MRAM) device, the method comprising:
forming a bottom electrode layer over a substrate; forming magnetic tunnel junction (MTJ) layers over the bottom electrode layer; forming a top electrode layer over the MTJ layers; patterning the top electrode layer, thereby forming a top electrode; forming first spacers along sidewalls of the top electrode; patterning the MTJ layers using the first spacers as a mask, thereby forming an MTJ stack; forming second spacers along sidewalls of the MTJ stack and the first spacers; and patterning the bottom electrode layer using the second spacers as a mask, thereby forming a bottom electrode.