发明名称 METHOD FOR PRODUCING A POLYLACTIC ACID-BASED FILM OR SHEET
摘要 A method of producing a polylactic acid based film or sheet with improved heat resistance and comprised of a resin composition containing a polylactic acid according to a melt film forming method, wherein the resin composition comprises polylactic acid (A), an acidic functional group-denatured olefin based polymer (B) containing an acidic functional group, and having an acid number of 10-70 mg KOH/g and a weight average molecular weight of 10,000-80,000, and a tetrafluoroethylene based polymer (C), which method comprises performing melt film formation at a temperature of the resin composition between the crystallization temperature (Tc) in a decreasing temperature process of the resin composition +15° C. and the melting temperature (Tm) in a raising temperature process −5° C., or solidifying the resin composition melt-formed in a film state by cooling after a temperature controllable step at crystallization temperature (Tc) in the decreasing temperature process ±10° C.
申请公布号 US2016024265(A1) 申请公布日期 2016.01.28
申请号 US201514875736 申请日期 2015.10.06
申请人 NITTO DENKO CORPORATION 发明人 ISHIGURO Shigeki;SENDA Hiroki
分类号 C08J5/18;B29C43/00;B29C43/24 主分类号 C08J5/18
代理机构 代理人
主权项 1. A method of producing a film or sheet of a resin composition containing a polylactic acid according to a melt film forming method, wherein the resin composition comprises polylactic acid (A), an acidic functional group-denatured olefin based polymer (B) containing an acidic functional group, and having an acid number of 10-70 mg KOH/g and a weight average molecular weight of 10,000-80,000, and a tetrafluoroethylene based polymer (C), which method comprises performing a melt film formation step at a temperature of the resin composition between the crystallization temperature (Tc) in a decreasing temperature process of the resin composition +15° C. and the melting temperature (Tm) in a raising temperature process −5° C., or solidifying the resin composition melt-formed in a film state by cooling after a crystallization promoting step at crystallization temperature (Tc) in a decreasing temperature process ±10° C.
地址 Osaka JP