发明名称 |
SIC POWER VERTICAL DMOS WITH INCREASED SAFE OPERATING AREA |
摘要 |
<p>A SiC Power Semiconductor device of the Field Effect Type (MOSFET, IGBT or the like) with "muted" channel conduction in some cells and with negative temperature coefficient of channel mobility, allowing an optimized thermal management of the cells for increased Safe Operating Area is described. Controlling the location of the Zero Temperature Crossover Point (ZTCP) in relationship to the drain current is achieved by the partition between the "active" and "inactive" ("muted") channels and by adjusting the mobility of the carriers in the channel for the temperature range of interest. The "Thermal management" is realized by surrounding the "active" cells/fingers with "inactive" ones and the "negative" feedback of the drain/collector current due to local increase of the gate bias is achieved by implementing in-situ "ballast" resistors inside of each source contact, among other possibilities.</p> |
申请公布号 |
EP2976786(A1) |
申请公布日期 |
2016.01.27 |
申请号 |
EP20130715526 |
申请日期 |
2013.03.21 |
申请人 |
MICROSEMI CORPORATION |
发明人 |
SDRULLA, DUMITRU;ODEKIRK, BRUCE;VANDERBERG, MARC |
分类号 |
H01L29/78;H01L29/06;H01L29/16 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|