SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate which includes a cell region and a scribe lane region; an active pin which protrudes from the substrate in a first direction in the cell region and is extended in the second direction intersecting with the first direction; a first gate structure which is extended in a third direction intersecting with the second direction on the active pin in the cell region; and a second gate structure which is directly formed on the substrate in the scribe lane region.
申请公布号
KR20160010123(A)
申请公布日期
2016.01.27
申请号
KR20140091051
申请日期
2014.07.18
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JONG SU;GO, HEE YOUNG;KIM, SANG JIN;BAE, YONG KUG;YOON, IL YOUNG