| 摘要 |
A semiconductor light emitting device of the present disclosure comprises: semiconductor layers; a reflection layer disposed on one side of the semiconductor layers; a growth substrate with a hexahedral shape, wherein the growth substrate includes a face and another face, the face includes a lower side on which the semiconductor layers are formed, an upper side facing the lower side and two lateral sides connecting the lower side to the upper side, the upper side has a length of 150μm or less, the another face is extended from one side of the face, the another face includes a lower side on which the semiconductor layers are formed and an upper side facing the lower side, the upper side of the another face is longer than the upper side of the face; a first electrical connection connected electrically to a first semiconductor layer; and a second electrical connection connected electrically to a second semiconductor layer through an insulated reflection layer and separated from the first electrical connection in the longitudinal direction of the upper side of the another face. |
