| 摘要 |
<p>A method of manufacturing a p-type electrode of a solar cell comprising: (a) preparing an n-type semiconductor substrate comprising an n-type base layer, a p-type emitter and a passivation layer formed on the p-type emitter; (b) applying a conductive paste onto the passivation layer, wherein the conductive paste comprises, (i) 100 parts by weight of a conductive powder, (ii) 1 to 12 parts by weight of a lead-free glass frit comprising, 20 to 33 mol. % of Bi2O3, 25 to 40 mol. % of B2O3, 15 to 45 mol. % of ZnO, 0.5 to 9 mol. % of alkaline-earth metal oxide, alkali metal oxide or a mixture thereof, wherein the mot % is based on the total molar fraction of each component in the glass frit, and (iii) 5 to 40 parts by weight of an organic medium; and (c) firing the applied conductive paste.</p> |
