| 摘要 |
Provided in the present invention is a semiconductor structure comprising at least one fin formed on a substrate and extending along a first direction; at least one gate formed on the fin and extending along a second direction substantially perpendicular to the first direction, wherein the gate includes a first isolation gate and at least one functional gate; source/drain features formed on two sides of each of the gate; an interlayer dielectric (ILD) layer formed on the source/drain features and forming a coplanar top surface with the first isolation gate. A first height of the first isolation gate is greater than a second height of each of the functional gate. |
