发明名称 Method for obtaining controller sidewall profile in print-patterned structures
摘要 <p>High aspect ratio structures can be obtained by print-patterning masking features in feature stacks such that each feature has a lateral edge which is aligned in a plane roughly perpendicular to the plane of the substrate on which the features are formed. Due to the differential lateral spreading between features formed on a substrate and formed atop other features, the print head is indexed less than the radius of a droplet to a position where a droplet ejected by the print head forms an upper feature atop a lower feature such that the lateral edges of the upper and lower features are aligned in the plane roughly perpendicular to the plane of the substrate. Feature stacks of two or more features may provide a vertical (or re-entrant) sidewall mask for formation of high aspect ratio structures, by e.g., electroplating, etc.</p>
申请公布号 EP2062849(B1) 申请公布日期 2016.01.27
申请号 EP20080169504 申请日期 2008.11.20
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 SHRADER, ERIC J.;SRINIVASAN, UMA;CRAWFORD, CLARK W.;LIMB, SCOTT J.
分类号 B81C1/00;H05K3/00 主分类号 B81C1/00
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